
Brief Introduction
Model CWD-500 is designed for ecaporating aluminium on siliconchips of semiconductor IC with the characteristics of no oil-steam pollution, high vacuum, less contamination of natrium ion on the aluminous film, even distribution of film layers, excellent step-function of the aluminous film and high efficiency in operation.
This model adopts a 225 magnetic-deflection electron beam, gun as the evaporation source with the crucible capacity of 35cc and evaporating rate of (Si-AI) 3000 ~ 4000 A/min.
The substrate rake is of planetary movement.
Heated by quartz halogen lamp, the controllable substrate teperature can be raised up to 200。C in 8 minutes.
Wide-ranging vacuum gauge (range from 5 x 10-1 to 4 x 10-11 Torr) is used for vacuum measurement.
Film thickness is monitored by digital quartz crystal film-thickness monitor.
This model is pumped by JCM-350 oilless ultra-high vacuum titanium pumping system with a triple-electrode-typed ion sputtering pump of 400 I/sec, serving as the main pump, and a titanium sublimation pump of 1000 ~ 1500 I/sec as the supplementary pump. The forestage pumps are composed of two molecularsieve adsorptive pumps of 1.5kg and also attached a set of mechanical pumps with adsorptive traps as forestage supplementary system, only used when nitrogen is lacked.
Main Technical Specification
1 | Vacuum Chamber: | 500 x 640mm |
2 | Ultimate Vacuum: | 5 x 10-9 Torr |
3 | Pumping Time: | From 760 to 10-7 Torr within an hour |
4 | Power of Electron Beam Gun: | 10kW 1000V 1A (Adjustable) |
5 | Revolving Speed of Substrated Rack: | 0 ~ 36 rpm (Adjustable) |
6 | Baking Power: | 3 kW (Adjustable) |
7 | Numbers of Silicon-chip: | 35mm ~ 40mm x 120 pcs |
8 | Total Power: | 25kW |
9 | Total Water Consumption: | 500 I/h |
10 | Overall Dimensions: | 2000 x 2000 x 2400mm |
11 | Total Weight: | Approx. 2000 kg |