Model CWD-500 is designed for ecaporating aluminium on siliconchips of semiconductor IC with the characteristics of no oil-steam pollution, high vacuum, less contamination of natrium ion on the aluminous film, even distribution of film layers, excellent step-function of the aluminous film and high efficiency in operation.
This model adopts a 225 magnetic-deflection electron beam, gun as the evaporation source with the crucible capacity of 35cc and evaporating rate of (Si-AI) 3000 ~ 4000 A/min.
The substrate rake is of planetary movement.
Heated by quartz halogen lamp, the controllable substrate teperature can be raised up to 200。C in 8 minutes.
Wide-ranging vacuum gauge (range from 5 x 10-1 to 4 x 10-11 Torr) is used for vacuum measurement.
Film thickness is monitored by digital quartz crystal film-thickness monitor.
This model is pumped by JCM-350 oilless ultra-high vacuum titanium pumping system with a triple-electrode-typed ion sputtering pump of 400 I/sec, serving as the main pump, and a titanium sublimation pump of 1000 ~ 1500 I/sec as the supplementary pump. The forestage pumps are composed of two molecularsieve adsorptive pumps of 1.5kg and also attached a set of mechanical pumps with adsorptive traps as forestage supplementary system, only used when nitrogen is lacked.
Main Technical Specification
|1||Vacuum Chamber:||500 x 640mm|
|2||Ultimate Vacuum:||5 x 10-9 Torr|
|3||Pumping Time:||From 760 to 10-7 Torr within an hour|
|4||Power of Electron Beam Gun:||10kW 1000V 1A (Adjustable)|
|5||Revolving Speed of Substrated Rack:||0 ~ 36 rpm (Adjustable)|
|6||Baking Power:||3 kW (Adjustable)|
|7||Numbers of Silicon-chip:||35mm ~ 40mm x 120 pcs|
|9||Total Water Consumption:||500 I/h|
|10||Overall Dimensions:||2000 x 2000 x 2400mm|
|11||Total Weight:||Approx. 2000 kg|