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- PMS-500 Plane Magnetically Controlled Sputtering System
- 平面磁控濺射設備
- 簡介
- PMS-500 平面磁控濺射設備是大規模集成電路硅片沉積AI、Si-AI 或 Si-AI-Cn 等薄膜的專用設備，也適用於在片狀基體上沉積其它非導磁性單金屬或合金薄膜，是微電子工業、科學研究工作等必不可少的先進的真空鍍膜設備。
- 由於採用箱式工作室、可拆卸的基片架和濺射材料的定向屏蔽等，設備使用、操作、清洗、維修方便。
- 真空機組抽氣能力大，基體夾具裝片量多，設備工具效率高。
- 濺射氣體壓強調節、基片架轉速調節和靶的參數調節穩定。鍍膜工藝重複性好。
- 基體帶有負偏壓，具有反濺射功能。
- 膜層致密，與基片附著力強，厚度均勻，台階覆蓋效果好，電子對基片損傷小，薄膜的合金成份基本與靶的合金成份相同。
- 主要技術性能規範
- (1) 工作室尺寸 500 x 620mm 箱式
- (2) 平面磁控靶 420 x 110mm x 2個
- 靶功率 最大10kW 直流
- 濺射速率 (靜止狀態，對 Si-AI)>6000A / min
- (3) 基件夾具轉速 1 ~ 16轉 / 分，可調
- 烘烤溫度 (基片靜止狀態)最高350。C
- 裝片量 f50mm x 72片，f75mm x 48片， f100mm x 24片
- (4) 極限真空度 (使用LN2) 10-7托
- 恢復真空時間 (使用LN) 760 ~ 1 x10-5托< 20分鐘
- 濺射氣體壓強自動穩定調節範圍 10-5 ~ 10-2托
- (5) 薄膜厚度 Si-AI 膜 1.2m 20分鐘之內
- 均勻性 (片內、片間、爐間)< + 5%
- (6) 工作周期 < 100分鐘
- (7) 總功率 25kW
- (8) 體積 2000 x 1800 x 1800mm
- (9) 總重量 2000kg
- Brief Introduction
- Model PMS-500 is specially designed to deposit AI, Si-AI or Si-AI-Cu films on siliconchip of LSI, and also widely used to deposit films of other non-magnetic pure metals or alloys on substrates, serving as an up-to-date vacuum sputterment indispensable for microelectronics industry and scientific research.
- Features
- Easy of operation, cleaning, maintenance and repair, obtained with the cabinet-shaped sputtering chamber, detachable substrate holding plates, directional shield for sputtering material, etc.
- High efficiency is provide by the powerful vacuum pumping set and the large-capacity substrate holder.
- Good repeatability of the sputtering process comes from the regultion of the sputtering gas pressure and the substrate holder speed, as well as the regulation and stabilization of the electrical parameters of the targets.
- A megative bias applied to the substrates permits reverse sputtering
- Fine and dense thin films of superior adhesion and excellent thickness uniformity, superb metallization of stepped substrates and little damage from electrons.
- The alloy compositions of the film are the same as those of the target.
- Main Technical Specifications
- (1) Vacuum Chamber: (Box-Shaped) 500x620mm
- (2) Plan Magnetically-controlled Target:
- * Number 2
- * Dimensions 420 x 110mm
- * Maximum Power 10kW, DC
- * Sputtering Rate
- (with Si-AI targets and static substrates) >6000A/min
- (3) Substrate Holder:
- * Speed (Adjustable) 1 ~ 16 (rpm)
- * Maximum Baking Temperature
- (when substrates are static) 350。C
- * Substrate Number f75mm x 48 pcs f100mm x 24pcs
- (4) Vacuum Characteristics:
- * Ultimate Vacuum (with liquid nitrogen) 10-7 Torr
- * Pumping Time (with liquid nitrogen) From 760 to 1 x 10-5 Torr within 20 minutes
- * Range of Automatically Stablized 10-5 to 10-2 Torr
- Sputtering Gas Pressure
Ho Ching Vacuum Machinery & Equipment Co.
(浩晴貿易有限公司 HO CHING TRADING LTD.)
| Tel: (852) 2116 9310 | Fax: (852) 2479 2385 |
| URL: http://www.hoching.com.hk | E-mail :sales@hoching.com.hk |